Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 24, Issue 19, Pages 1712-1714Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2012.2213244
Keywords
High speed; microring resonator (MRR); optical modulation; silicon modulators
Funding
- National Basic Research Program of China [2011CB301701, 2012CB933502]
- National Natural Science Foundation of China [60877036, 61107048]
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We experimentally demonstrate silicon microring modulators with >40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85 x 10(-5)/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of similar to 8 000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
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