Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 24, Issue 6, Pages 461-463Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2011.2181496
Keywords
Germanium quantum well; optical interconnects; optical waveguide modulator; optoelectronics; quantum-confined Stark effect
Funding
- DARPA MTO Office under the UNIC [Oracle HR0011-08-09-0001]
- SRC/DARPA FCRP IFC
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We report a Ge/SiGe quantum well waveguide electroabsorption modulator that is monolithically integrated with silicon-on-insulator waveguides. The active quantum well section is selectively grown on a silicon-on-insulator substrate and has a footprint of 8 mu m(2). The integrated device demonstrates more than 3.2-dB contrast ratio with 1-V direct voltage swing at 3.5 GHz. We also show the potential of this device to operate in the telecommunication C-band at room temperature.
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