Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 24, Issue 16, Pages 1443-1445Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2012.2206378
Keywords
Bragg grating; high power; laser fabrication; semiconductor laser; wavelength stabilization
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We present the results for high-power broad-area distributed feedback lasers with surface gratings of 80th, 135th, and 270th Bragg orders. A maximum output power of 11 W for a laser with 80th order grating, emitting around 976 nm with a spectral width <1 nm has been achieved. Similar narrow linewidth operation occurs for devices with 135th Bragg order from 7- to 11-W output power. The technological approach to fabricating these devices based on stepper lithography and reactive ion etching is described.
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