Related references
Note: Only part of the references are listed.Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate
Feng Xie et al.
SOLID-STATE ELECTRONICS (2011)
Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates
Yun Zhang et al.
APPLIED PHYSICS LETTERS (2009)
High-resistivity GaN homoepitaxial layer studied by Schottky diode structure
H. Shi et al.
ELECTRONICS LETTERS (2009)
GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates
Shoou-Jinn Chang et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2008)
Cathodoluminescence mapping and selective etching of defects in bulk GaN
Hai Lu et al.
JOURNAL OF CRYSTAL GROWTH (2006)
Growth and characterization of GaN PiN rectifiers on free-standing GaN
XA Cao et al.
APPLIED PHYSICS LETTERS (2005)
Short-wavelength solar-blind detectors - Status, prospects, and markets
M Razeghi
PROCEEDINGS OF THE IEEE (2002)
High-speed visible-blind GaN-based indium-tin-oxide Schottky photodiodes
N Biyikli et al.
APPLIED PHYSICS LETTERS (2001)
Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors
T Li et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2001)