Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 24, Issue 24, Pages 2203-2205Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2012.2222022
Keywords
Dual operation mode; GaN; homoepitaxy; Schottky-barrier photodetector
Funding
- State Key Program for Basic Research of China [2010CB327504, 2011CB922100, 2011CB301900]
- National Natural Science Foundation of China [60825401, 60936004, 11104130, 60990311]
- Natural Science Foundation of Jiangsu Province [BK2011050, BK2011556]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
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We demonstrate a dual-operation-mode ultraviolet (UV) Schottky-barrier photodetector (PD) fabricated on high-resistivity GaN homoepitaxial layer with low defect density. The undoped GaN active layer is grown by metal-organic chemical vapor deposition on a conductive bulk GaN substrate. Under reverse and zero bias, the PD works in depletion mode with low dark current and high UV/visible rejection ratio. Under forward bias, the PD works alternatively in photoconductive mode, which exhibits high photo-responsivity and an attractive narrow detection band around 365 nm. In addition, the PD also shows reasonable response speed in both operation modes.
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