Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 23, Issue 23, Pages 1781-1783Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2011.2169397
Keywords
Evanescent coupling; heterogeneous integration; semiconductor lasers; silicon photonics
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An evanescently coupled, hybrid III-V/Silicon Fabry-Perot laser based on adhesive divinyl siloxane-benzocyclobutene (DVS-BCB) bonding is presented operating at 1310 nm. We obtain 5.2-mW output power in continuous-wave (CW) regime at 10 degrees C with a threshold current density of 2.83 kA/cm(2) in an 800-mu m-long device. A specially developed bonding procedure produces 50-nm-thick bonding layers, enabling the evanescent coupling.
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