Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 23, Issue 12, Pages 765-767Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2011.2132794
Keywords
Germanium; junction field-effect-transistor (JFET); photodetector
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This letter reports our recent results on the high-speed silicon-waveguided germanium junction-field-effect-transistor (JFET)-based photodetector. Although the Ge layer's footprint on wafer is as small as 2 mu m x 2 mu m, low standby current (0.5 mu A at 1 V), high responsivity (642 mA/W), and high speed (8 GHz) are achieved. The reported Ge JFET is a promising solution for photodetector's further scaling-down.
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