GaInP-AlInP-GaAs Blue Photovoltaic Detectors With Narrow Response Wavelength Width

Ga(0.51)In(0.49)P-Al(0.52)In(0.48)P-GaAs blue photovoltaic detectors using AlInP as a light absorption active layer and GaInP as a short wavelength limiting cap layer have been fabricated by using gas source molecular beam epitaxy, and their performances have been characterized in detail. Excellent performance has been demonstrated on the detectors, resistance area product of R(0)A = 6.9 x 10(8) Omega . cm(2), and the open-circuit voltage of V(oc) > 128 V have been measured at room temperature. The detectors show peak response at 480 nm with responsivity of 0.168 A/W at zero bias, as well as an inherent narrow wavelength width of 9.4%, which makes them a good candidate in blue light detection applications such as water related sensing and communication.