Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 22, Issue 2, Pages 103-105Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2009.2035821
Keywords
Characteristic temperature; quantum dot (QD); stacking strain compensation
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We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20 degrees C-80 degrees C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.
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