Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 22, Issue 4, Pages 248-250Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2009.2038073
Keywords
Atomic layer deposition (ALD); heterojunction; light-emitting diode (LED); zinc oxide
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The effect of external feedback on the ultraviolet electroluminescence (EL) from n-ZnO/p-GaN heterojunction light-emitting diodes at room temperature was studied. Atomic layer deposition was used to grow the high-quality n-type ZnO epilayer, and the p-type GaN was prepared by metal-organic chemical vapor deposition on a double-polished c-Al(2)O(3) substrate. The back of the c-Al(2)O(3) substrate was deposited with aluminum as an external-feedback reflector. Significant enhancement of the EL intensity from ZnO, spectral narrowing, coupled with the superlinear increase in the ZnO EL intensity with the injection current have been observed, which are attributed to amplified spontaneous emission in the ZnO epilayer caused by the external optical feedback.
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