Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 22, Issue 4, Pages 215-217Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2009.2037436
Keywords
Air mass 1.5 global solar spectrum; fill factors (FFs); multiple-quantum-well (MQW); open-circuit voltages (V-oc); photovoltaic efficiency; short-circuit current densities (J(sc))
Funding
- National Science Council, Taiwan, R.O.C. [NSC96-2221-E-274-012, NSC-97-2215-E-274-003, NSC98-2221-E-274-011]
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In this letter, I describe an effective method of obtaining a high photovoltaic efficiency of InxGa1-xN-GaN-based solar cells with a multiple-quantum-well (MQW) structure using a SiCN-Si (111) substrate. The MQW region had a higher solar cell absorption than the non-MQW InxGa1-xN-GaN sample. Under an air mass 1.5 global solar spectrum, a maximum photovoltaic efficiency of 5.43% in the MQW sample over the control sample was observed. It was found that the device and fabrication technology developed in this study are applicable to the realization of solar cells with high open-circuit voltages (V-oc) of 2.86-2.96 V, high short-circuit current densities (J(sc)) of 2.40-2.45 mA/cm(2), and high fill factors of 74.8%-76.5%.
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