4.5 Article

Photorefractive-Damage-Resistant Locally Er-Mg-Doped Near-Stoichiometric Ti:Mg:Er:LiNbO3 Strip Waveguides: A Way Towards New Devices

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 22, Issue 13, Pages 1008-1010

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2010.2048705

Keywords

Antiphotorefraction; local Er-Mg-codoping; near-stoichiometric (NS) Ti:Mg:Er:LiNbO3 waveguide

Funding

  1. Council of the Hong Kong Special Administrative Region, China [1194/07]
  2. National Natural Science Foundation of China [60577012, 50872089]

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We report photorefractive-damage-resistant near-stoichiometric (NS) Ti : Mg : Er : LiNbO3 strip waveguides fabricated on an initially congruent, undoped Z-cut substrate in sequence by local Er-doping in air, Mg-Ti prediffusion in wet O-2 atmosphere, and post vapor-transport-equilibration. These waveguides with an initial Ti-strip width of 4-7 mu m are single-mode at 1.3-1.5 mu m, support only transverse-magnetic mode, and have a loss of 1.4 dB/cm. The waveguides are NS, still retain LiNbO3 phase, and show stable 1531-nm small-signal enhancement under the 980-nm pump power of at least 216 mW, implying that the photorefractive effect is effectively suppressed. The waveguides would open up a way towards new devices.

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