Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 22, Issue 13, Pages 984-986Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2010.2049013
Keywords
Light-emitting diode (LED); localized surface plasmon (LSP); nanosphere lithography
Funding
- Ministry of Education and the National Science Council of Taiwan [NSC 96-2221-E-006-079-MY3]
- Bureau of Energy, Ministry of Economic Affairs, Taiwan [98-D0204-6]
- TDPA
- National Science Council of the Republic of China (R.O.C.) in Taiwan [TDPA 97-EC-17-A-07-S1-105, NSC 97-2623-E-168-001-IT]
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We describe a method to enhance the light output power of nitride-based light-emitting diodes (LEDs) through the coupling of multiple quantum wells (MQWs) with localized surface plasmon (LSP). The LSP was generated on an Ag nanotriangle array (NTA) on a 40-nm-thick p-type GaN layer beneath the p-pad of the LED, which was partially etched by inductively coupled plasma system. The Ag NTA was fabricated by nanosphere lithography. The resonant frequency of a generated LSP can be precisely controlled by changing the size of the polystyrene nanosphere and the Ag deposition thickness. Under the optimum conditions, the light output power of LED with an Ag NTA was 15.4% higher than LED without an Ag NTA at an inject current of 20 mA. The improvement in light output power can be attributed to the coupling effect between MQW and LSP.
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