Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane (11(2)over-bar0) GaN Light-Emitting Diodes on Sapphire Substrate

We report on the effects of basal stacking faults (BSFs) on the electrical anisotropy and the device characteristics of nonpolar a-plane GaN (11 (2) over bar0) light-emitting diodes (LEDs) on r-plane (1 (1) over bar 02) sapphire substrates. The sheet resistance in the direction parallel to the c-axis [0001] is 18%-70% higher than the one in the direction parallel to the m-axis [1 (1) over bar 00]. The anisotropic conductivity of faulted a-plane GaN films can be explained by carrier scatterings from BSFs. It is also shown that the output power of nonpolar a-plane GaN LEDs are significantly influenced by the presence of BSFs, which laterally hampers the carrier transport in the n-GaN layer, especially in the direction parallel to the c-axis in faulted nonpolar nitride films.