Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 21, Issue 1-4, Pages 257-259Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2008.2010556
Keywords
Beam shaping; GaN; high-aspect-ratio nanorod arrays; vertical-injection light-emitting diodes (VI-LEDs)
Funding
- National Science Council in Taiwan [NSC96-2221-E-009-095-MY3, NSC96-2628-E-009-017-10Y3]
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The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs.) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma reactive ion etching. The fabricated nanorod arrays not only provide an omnidirectional escaping zone for photons, but also serve as waveguiding channels for the emitted light, resulting in a relatively collimated beam profile. The light output power of the VI-LED with nanorod arrays is enhanced by 40 %, compared to a conventional VI-LED. The measured far-field profiles indicate that the enhancement is mainly along the surface normal direction, within a view angle of 20 degrees.
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