Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 21, Issue 23, Pages 1782-1784Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2009.2033713
Keywords
4H-SiC Schottky photodiode; photovoltaic regime; ultraviolet (UV) light detectors
Ask authors/readers for more resources
Ultraviolet light detection has a wide range of scientific and industrial applications. In particular, SiC photodiodes have been proposed because of their robustness even in harsh environments, high quantum efficiency but excellent visible blindness, very low dark current, and high speed. Here, we report on the electrical and optical performances of high efficient large area 4H-SiC Schottky photodiodes working in the photovoltaic regime. We demonstrate that the high signal-to-noise ratio along with the low operating reverse voltage in spite of the large sensitive area makes them suitable in low power consumption applications requiring high sensitivity down to 250 nm.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available