Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5-to 2.7-μm Wavelength Range

GaInAsSb-GaSb strained quantum-well (QW) ridge waveguide diode lasers emitting in the wavelength range from 2.51 to 2.72 mu m have been grown by molecular beam epitaxy. The devices show ultralow threshold current densities of 44 A/cm(2) (L --> infinity) for a single QW device at 2.51 mu m, which is the lowest reported value in continuous-wave operation near room temperature (15 degrees C) at this wavelength. The devices have an internal loss of 3 cm(-1) and a characteristic temperature of 42 K. By using broader QWs, wavelengths up to 2.72 mu m could be achieved.