Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 21, Issue 14, Pages 1020-1022Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2009.2022059
Keywords
Biomedical imaging; complementary metal-oxide-semiconductor (CMOS) integrated circuits; image sensors; photodetectors; photodiodes; p-n junctions
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A single-photon avalanche diode structure implemented in a 130-nm imaging process is reported. The device employs a p-well anode, rather than the commonly adopted p+, and a novel guard ring compatible with recent scaling trends in standard nanometer scale complementary metal-oxide-semiconductor technologies. The 50-mu m(2) active area device exhibits a dark count rate of 25 Hz at 20 degrees C and a photon detection efficiency peak of 28% at 500 nm.
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