Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 21, Issue 13, Pages 827-829Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2009.2019261
Keywords
Fabrication; indium compounds; integrated optoelectronics; laser cavity resonators; ridge waveguides; semiconductor lasers; silicon
Funding
- MIT-Singapore Alliance
- MARCO Interconnect Focus Center
- Army Research Office
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We report the successful integration on silicon of small footprint, low-threshold electrically pumped edge-emitting lasers by a new approach incorporating microcleaving technology to produce 6-mu m-thick platelet lasers with cleaved facets, microscale pick. and place assembly to position them on the substrate, and diaphragm pressure solder bonding to attach/connect them permanently in place. InP-based ridge-waveguide platelet lasers integrated on silicon lase at 1550-nm continuous-wave to 55 degrees C (pulsed to 80 degrees C) with output powers as high as 26.8 mW, external differential quantum efficiencies as high as 81%, and threshold currents as low as 18 mA.
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