Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 20, Issue 21-24, Pages 1808-1810Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2008.2004354
Keywords
Electroabsorption modulators; selective area growth (SAG); semiconductor optical amplifier (SOA)
Funding
- French Agence Nationale pour la Recherche
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We developed a 1.0-Gb/s AlGaInAs colorless remote amplified modulator with a gain peak detuned semiconductor optical amplifier using a selective epitaxy and semi-insulating buried heterostructure. The device provides up to 10-dB insertion gain and lossless operation together with static extinction ratio larger than 20 dB over a 50-nm range. Using this device, we achieved 10-Gb/s remote modulation over 80-nm spectral range in a back-to-back transmission. The device operates also in a single-mode fiber bidirectional link without penalty at 20 degrees C.
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