Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 20, Issue 13-16, Pages 1293-1295Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2008.926892
Keywords
GaN flip-chip light-emitting diode (LED); light extraction efficiency; SiO2 microlens
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Silicon oxide (SiO2) hemispherical microlens with the density of 8.2 x 10(8) cm(-2) has been formed on a sapphire substrate of gallium nitride (GaN) light-emitting diode (LED) by liquid phase deposition to enhance the light extraction efficiency. For flip-chip LED, the Si02 microlens exhibits 1.25 times enhancement of optical output power. In comparison of the conventional LED, there is 61% enhancement for flip-chip LED with a Si02 microlens.
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