Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 20, Issue 5-8, Pages 608-610Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2008.918821
Keywords
light-emitting diode (LED); photoelectrochemical (PEC) etching; surface roughening
Ask authors/readers for more resources
Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 x 10(8) cm(-2). Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available