Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 20, Issue 17-20, Pages 1551-1553Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2008.928823
Keywords
Avalanche photodiodes (APDs); photodetector; silicon carbide; ultraviolet (UV) detector
Funding
- Defense Advanced Research Projects Agency (DARPA)
- Army Research Laboratory
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We report a 4H-SiC PIN recessed-window avalanche photodiode with a peak responsitivity of 136 mA/W (external quantum efficiency = 60%) at lambda = 262 nm, corresponding to more than a 50% increase in external quantum efficiency compared to nonrecessed structures. The dark current was 90 pA at a photocurrent gain of 1000. Avalanche gains of over 10(6), k similar to 0.1, and a spatially uniform response were achieved.
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