Complex Permittivity Determination of Thin-Films Through RF-Measurements of a MIM Capacitor

A method for determining the permittivity and loss tangent of thin-film layers is presented. The method relies on the measurement of the reflection coefficient to a single metal-insulator-metal (MIM) structure without requiring additional de-embedding dummy structures to account for the test-fixture parasitics. Results allow to obtain the frequency-dependent dielectric parameters, whereas the impact of the test-fixture parasitics is quantified by developing the corresponding equivalent circuit model. The accuracy of this model is verified by obtaining excellent simulation-experiment correlation of the MIM admittance at microwave frequencies.