4.6 Article

Temperature Sensors to Measure the Central Frequency and 3 dB Bandwidth in mmW Power Amplifiers

Journal

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 24, Issue 4, Pages 272-274

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2013.2293668

Keywords

Built-in test; CMOS millimeter wave integrated circuits; design for testability; frequency response; temperature measurement

Funding

  1. Spanish Ministry of Science and Innovation
  2. EU-Feder [TEC2008-01856]
  3. AGAUR SGR [1497]

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This letter introduces a novel on-chip measurement technique for the determination of the central frequency and 3 dB bandwidth of a 60 GHz power amplifier (PA) by performing low frequency temperature measurements. The temperature sensor is embedded in the same silicon die as the PA, and placed in empty spaces next to it. Results confirm that temperature sensors can be used as functional built-in testers which serve to reduce testing costs and enhance yield as part of self-healing strategies.

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