Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 21, Issue 8, Pages 445-447Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2011.2160525
Keywords
Extrinsic capacitances; GaN HEMT; modeling
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A novel extraction methodology is proposed to distinguish between the extrinsic and intrinsic capacitances of wide GaN HEMTs. This approach is based on the experimental observation that the real parts of the impedance parameters of such devices increase at high-frequency. The mathematical analysis clearly shows that this so far uninvestigated behavior can be attributed to the extrinsic capacitances.
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