Journal
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 18, Issue 10, Pages 707-709Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2008.2003485
Keywords
Monolithic microwave integrated circuit (MMIC); power added efficiency (PAE); power amplifier (PA); psuedomorphic high electronic mobility transistor (PHEMT); X-band
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Funding
- National Science Council [NSC 95-2221-E-006-428-MY3]
- Foundation of Chen, Jieh-Chen Scholarship. Tainan, Taiwan, R.O.C
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An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 11 input and output impedance. Based on a 0.35 mu m gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.
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