Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 48, Issue 6, Pages 1530-1538Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2013.2252523
Keywords
Bandgap reference (BGR) circuits; CMOS analog integrated circuits; low voltage; nanowatt; reference circuits
Categories
Funding
- VLSI Design and Education Center (VDEC)
- University of Tokyo
- Cadence Design Systems, Inc.
- Mentor Graphics, Inc.
- STARC
- STARC, KAKENHI
- New Energy and Industrial Technology Development Organization (NEDO)
Ask authors/readers for more resources
This paper presents bandgap reference (BGR) and sub-BGR circuits for nanowatt LSIs. The circuits consist of a nano-ampere current reference circuit, a bipolar transistor, and proportional-to-absolute-temperature (PTAT) voltage generators. The proposed circuits avoid the use of resistors and contain only MOSFETs and one bipolar transistor. Because the sub-BGR circuit divides the output voltage of the bipolar transistor without resistors, it can operate at a sub-1-V supply. The experimental results obtained in the 0.18-mu m CMOS process demonstrated that the BGR circuit could generate a reference voltage of 1.09 V and the sub-BGR circuit could generate one of 0.548 V. The power dissipations of the BGR and sub-BGR circuits corresponded to 100 and 52.5 nW.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available