4.6 Article

2.4 Gbps, 7 mW All-Digital PVT-Variation Tolerant True Random Number Generator for 45 nm CMOS High-Performance Microprocessors

Journal

IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 47, Issue 11, Pages 2807-2821

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2012.2217631

Keywords

True random number generator (TRNG); metastability; encryption; security; key-generation; all-digital; entropy generation

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This paper describes an all-digital PVT-variation tolerant true-random number generator (TRNG), fabricated in 45 nm high-k/metal-gate CMOS, targeted for on-die entropy generation in high-performance microprocessors. The TRNG harvests differential thermal-noise at the diffusion nodes of a pre-charged cross-coupled inverter pair to resolve out of metastability, generating one random bit/cycle. A self-calibrating 2-step tuning mechanism using coarse-grained configurable inverters and fine-grained programmable clock delay generators, along with an entropy-tracking feedback loop provide tolerance to 20% PVT variation-induced device mismatches, enabling lowest-reported energy-consumption of 2.9 pJ/bit with a dense layout occupying 4004 mu m(2), while achieving: (i) 2.4 Gbps random bit throughput, 7 mW total power consumption with 0.7 mW leakage power component, measured at 1.1 V, 50 degrees C, (ii) random bitstreams that passes all NIST RNG tests with raw entropy/bit measured up to 0.9999999993, (iii) good distribution of 1's with 4-bit entropy of 3.97996 and high-entropy pattern probability of 0.066 (iv) wide operating supply voltage range with robust sub-threshold voltage performance of 14 Mbps, 5.6 mu W, measured at 280 mV, 50 degrees C, (v) 12 fine-grained high-entropy settings for the TRNG to dither in during steady-state operation, (vi) <3% error while using an analytical ergodic Markov chain model for predicting pattern probabilities and (vii) 200x higher throughput and 9x higher energy-efficiency than previously reported implementations. Design modifications for robust operation in 22 nm high-volume manufacturing in the presence of 3 sigma process variations demonstrate scalability of the all-digital design to future technologies.

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