4.6 Article Proceedings Paper

A Fully-Integrated 16-Element Phased-Array Receiver in SiGe BiCMOS for 60-GHz Communications

Journal

IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 46, Issue 5, Pages 1059-1075

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2011.2118110

Keywords

Beamforming; BiCMOS; millimeter-wave; noise; phased array; power combiners; power splitter; receiver; RF-path phase-shifting; SiGe; WiGig; 60 GHz; 802.11 ad; 802.15.3 c

Ask authors/readers for more resources

A fully-integrated 16-element 60-GHz phased-array receiver is implemented in IBM 0.12-mu m SiGe BiCMOS technology. The receiver employs RF-path phase-shifting and is designed for multi-Gb/s non-line of sight links in the 60-GHz ISM band (IEEE 802.15.3c and 802.11ad). Each RF front-end includes variable-gain LNAs and phase shifters with each front-end capable of 360 degrees variable phase shift (11.25 degrees phase resolution) from 57 GHz to 66 GHz with coarse/fine gain steps. A detailed analysis of the noise trade-offs in the receiver array design is presented to motivate architectural choices. The hybrid active and passive signal-combining network in the receiver uses a differential cross-coupled Gysel power combiner that reduces combiner loss and area. Each array front-end has 6.8-dB noise figure (at 22 degrees C) and the array has -10 dB to 58 dB programmable gain from single-input to output. Sixteen 60-GHz aperture-coupled patch-antennas and the RX IC are packaged together in multi-layer organic and LTCC packages. The packaged RX IC is capable of operating in all four IEEE 802.15.3c channels (58.32 to 64.8 GHz). Beam-forming and beam-steering measurements show good performance with 50-ns beam switching time. 5.3-Gb/s OFDM 16-QAMand 4.5 Gb/s SC 16-QAM links are demonstrated using the packaged RX ICs. Both line-of-sight links (similar to 7.8 m spacing) and non-line-of-sight links using reflections (similar to 9 m total path length) have been demonstrated with better than -18 dB EVM. The 16-element receiver consumes 1.8 W and occupies 37.7 mm(2) of die area.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available