Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 46, Issue 9, Pages 1985-1997Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2011.2157010
Keywords
90-nm CMOS; dead zone; multi-stage rectifier; radio frequency identification (RFID); RF energy harvesting; RF-powered sensor network; threshold compensation
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Funding
- ENIAC [120214]
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This paper presents an efficient energy harvester for RF-powered sensor networks. The circuit is based on an improved multi-stage rectifier, which exploits a fully passive threshold self-compensation scheme to overcome the limitation due to the input dead zone. A CAD-oriented design methodology is also proposed, which is aimed at maximizing the overall power conversion efficiency of the harvester through an optimum trade-off among matching losses, power reflection and rectifier efficiency. According to the proposed methodology, a 915-MHz harvester comprising an integrated input matching network and a 17-stage self-compensated rectifier has been designed and fabricated in a 90-nm CMOS technology. The rectifier exhibits a remarkably low input power threshold, as it is able to deliver a 1-V dc output voltage to a capacitive load with a very small input power of -24 dBm (4 mu W). When driving a 1-M Omega load, the device can supply a 1.2-V output with an input power of -18.8 dBm (13.1 mu W). The achieved results exceed the performance of previously reported RF multi-stage rectifiers in standard analog CMOS technology.
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