4.6 Article

A 10-bit 100-MS/s Reference-Free SAR ADC in 90 nm CMOS

Journal

IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 45, Issue 6, Pages 1111-1121

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2010.2048498

Keywords

Charge-recovery; reference-free; switched technique

Funding

  1. University of Macau
  2. Macao Science and Technology Development Fund (FDCT)

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A 1.2 V 10-bit 100 MS/s Successive Approximation (SA) ADC is presented. The scheme achieves high-speed and low-power operation thanks to the reference-free technique that avoids the static power dissipation of an on-chip reference generator. Moreover, the use of a common-mode based charge recovery switching method reduces the switching energy and improves the conversion linearity. A variable self-timed loop optimizes the reset time of the preamplifier to improve the conversion speed. Measurement results on a 90 nm CMOS prototype operated at 1.2 V supply show 3 mW total power consumption with a peak SNDR of 56.6 dB and a FOM of 77 fJ/conv-step.

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