4.6 Article Proceedings Paper

A 0.65 THz Focal-Plane Array in a Quarter-Micron CMOS Process Technology

Journal

IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 44, Issue 7, Pages 1968-1976

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2009.2021911

Keywords

Submillimeter wave detectors; submillimeter wave imaging; microstrip antennas; CMOS; terahertz direct detection; resistive mixer; distributed resistive self-mixing

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A focal-plane array (FPA) for room-temperature detection of 0.65-THz radiation has been fully integrated in a low-cost 0.25 mu m CMOS process technology. The circuit architecture is based on the principle of distributed resistive self-mixing and facilitates broadband direct detection well beyond the cutoff frequency of the technology. The 3 x 5 pixel array consists of differential on-chip patch antennas, NMOS direct detectors, and integrated 43-dB voltage amplifiers. At 0.65 THz the FPA achieves a responsivity (R-v) of 80 kV/W and a noise equivalent power (NEP) of 300 PW/root Hz. Active multi-pixel imaging of postal envelopes demonstrates the FPAs potential for future cost-effective terahertz imaging solutions.

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