Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 20, Issue 6, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2014.2321288
Keywords
Avalanche photodiodes; optical fiber communications; photodetectors; quantum dots (QDs)
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Funding
- Japanese government by Ministry of Internal Affairs and Communications
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We have fabricated a high-density 1.5-mu m quantum dot photodetector for advanced optical fiber communications and have found unique optical properties, including avalanche multiplication. The structure of the absorption layer had stacked InAs/InGaAlAs layers with a high density of 1 x 10(12) cm(-2), which consisted of strained 1.5-mu m InAs quantum dots and a strain compensation layer of InGaAlAs. A three times larger absorption coefficient than the InGaAs layer, an avalanche multiplication effect, and a low dark current are reported with InAs quantum dot conditions.
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