Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 20, Issue 6, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2014.2328437
Keywords
AlGaN; avalanche photodiodes (APDs); solar blind; polarization electric field
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Funding
- National 973 Project, China [2012CB619306, 2011CB301900]
- National Natural Science Foundation of Jiangsu Province, China [BK2011010]
- National Natural Science Foundation of China [61274075]
- Ph.D. Programs Foundation of Ministry of Education of China [20110091110032]
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We present improved AlGaN solar-blind avalanche photodiodes (APDs) with a separate absorption and multiplication (SAM) structure by introducing a polarization electric field with the same direction as reverse bias field in the multiplication region. This polarization electric field can be realized by reducing the Al composition of the p-AlGaN layer in a conventional p-i-n-i-n SAM-APD structure. After employing a reduced-Al-composition p-AlGaN instead of the commonly used p-AlGaN, the polarization enhanced APD exhibits a markedly lower avalanche breakdown voltage and a near two times higher avalanche gain up to 2.1 x 10(4) compared with its conventional counterpart. In addition, X-ray diffraction and transmission electron microscopy results show that a moderate reduction of Al composition in the p-AlGaN layer does not degrade the crystalline quality of the polarization enhanced APD structure resulted from lattice mismatch, which guarantees the polarization enhanced effect.
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