Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 20, Issue 4, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2013.2292523
Keywords
Nanophotonics; integrated optics; integrated optoelectronics; silicon photonics; semiconductor lasers; microassembly
Categories
Funding
- European Research Council (ERC) [FP7/2011-2016 279770]
- European Commission [CIG FP7/2011-2015 293767]
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We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator waveguides. The proposed devices relax the horizontal alignment tolerances required to achieve high coupling efficiencies and are suitable for passively aligned assembly with pick-and-place tools. Light is coupled to two on-chip single mode SOI waveguides with almost identical power coupling efficiency, but with a varying relative phase accommodating the lateral misalignment between the laser diode and the coupling devices, and is suitable for the implementation of parallel optics transmitters. Experimental characterization with both a lensed fiber and a Fabry-Perot semiconductor laser diode has been performed. Excess insertion losses (in addition to the 3 dB splitting) taken as the worst case over both waveguides of respectively 2 +/- 0.3 dB and 3.1 +/- 0.3 dB, as well as excellent 1 dB loss placement tolerance range of respectively 2.8 mu m and 3.8 mu m (worst case over both in-plane axes) have been measured for the two devices. Back-reflections to the laser are below -20 dB for both devices within the 1 dB misalignment range. Devices were fabricated with 193 nm DUV optical lithography and are compatible with mass-manufacturing with mainstream CMOS technology.
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