Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 20, Issue 4, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2013.2294470
Keywords
Phototransistors; photodetectors; optoelectronic devices; optical waveguide components; optical interconnections
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Funding
- National Science Foundation Center for Energy Efficient Electronics Science (E3S) under NSF [0939514]
- National Science Foundation Center for Integrated Access Network (CIAN) [EEC-0812072]
- Intel
- NSF [DGE 1106400]
- NDSEG
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This paper presents a novel germanium gated NMOS phototransistor integrated on a silicon photonics platform on silicon-on-insulator (SOI) substrate. The phototransistor is fabricated with a modified NMOS process flow, with germanium which is recrystallized using rapid melt growth during the source/drain activation anneal step. The resulting device, with 1-mu m channel length, and 8-mu m channel width, demonstrates a responsivity of over 18 A/W at 1550 nm with 583 nW of incident light. By increasing the incident power to 912 mu W, the device operates at 2.5 GHz. Miniaturization is expected to improve both responsivity and speed in future devices.
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