Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 19, Issue 5, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2013.2247569
Keywords
GaN light-emitting diodes (LEDs); green's function approach; luminescence enhancement; metallic grating; optical modes; reflectometry measurements; surface plasmons (SPs)
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Funding
- Academy of Finland
- Multidisciplinary Institute of Digitalization and Energy
- Aalto Energy Efficiency Research Programme
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Using scattering to improve light extraction from semiconductors is a widely adopted method to increase the efficiency of modern light-emitting devices. Recently, there has also been much interest in the potential emission enhancement provided by the strong coupling between surface plasmons and semiconductor emitters. In this study, we develop a Green's function-based model to describe the emission enhancement and modification in optical properties obtained as a result of scattering and plasmon engineering. The Green's function method is used to answer fundamental questions regarding luminescence enhancement in periodically grated GaN light-emitting structures. The Green's function approach is a very attractive analytical method to studying the emission properties of grated multilayer structures, providing insight beyond numerical solutions. Modeling results from reflectometry measurements of silver-grated GaN structures allows to explain experimentally observed interference features. A discussion regarding the role of periodic grating in enhancing emission from the structures is included.
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