Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 19, Issue 5, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2013.2241397
Keywords
Diode lasers; GeSn alloy; infrared lasers; optoelectronic materials; semiconductor lasers; semiconductor materials; theory and design
Categories
Funding
- APIC Corporation
- PhotonIC Corp., CA, USA
- National Science Foundation [DGE-0645962]
- Stanford Graduate Fellowship
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In this paper, a theoretical analysis of unstrained GeSn alloys as a laser gain medium was performed. Using the empirical pseudopotential method, the band structure of GeSn alloys was simulated and verified against experimental data. This model shows that GeSn becomes direct bandgap with 6.55% Sn concentration. The optical gain of GeSn alloys with 0-10% Sn concentration was calculated with different n-type doping concentrations and injection levels. It is shown theoretically that adding Sn greatly increases the differential gain owing to the reduction of energy between the direct and indirect conduction bands. For a double-heterostructure laser, the model shows that at a cavity loss of 50 cm(-1), the minimum threshold current density drops 60 times from Ge to Ge0.9Sn0.1, and the corresponding optimum n-doping concentration of the active layer drops by almost two orders of magnitude. These results indicate that GeSn alloys are good candidates for a Si-compatible laser.
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