Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 19, Issue 4, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2013.2240438
Keywords
Dark current and transmission electron microscopy; distributed feedback devices; semiconductor device reliability
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Funding
- Defense Advanced Research Projects Agency Electronic-Photonic Heterogeneous Integration project
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We present results from reliability studies on hybrid silicon distributed feedback lasers. The devices show no degradation at 70 degrees C for 5000 h. We investigate the influence on reliability of a superlattice between the active region and the bonded interface. Transmission electron microscopy images from a failed device show no defects in the active region along a 15-mu m-long longitudinal cross section at the center of the laser cavity.
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