Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 18, Issue 1, Pages 318-328Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2011.2123876
Keywords
Semiconductor nanostructures; spectroscopy; ultrafast optics
Categories
Funding
- National Science Foundation
- U.S. Department of Energy
- Chemical Sciences, Geosciences, and Biosciences Division Office of Basic Energy Sciences
- National Academy of Sciences/National Research Council
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Optical 2-D Fourier transform spectroscopy is a powerful technique for studying resonant light-matter interactions, determining the transition structure and monitoring dynamics of optically created excitations. The ability to separate homogeneous and inhomogeneous broadening is one important capability. In this paper, we discuss the use of this technique to study excitonic transitions in semiconductor nanostructures. In quantum wells, the effects of structural disorder is observed as inhomogeneous broadening of the exciton resonances. In quantum dots, the temperature dependence of the homogeneous width gives insight into the nature of the dephasing processes.
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