Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 17, Issue 4, Pages 829-846Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2010.2070790
Keywords
Gold-assisted vapor-liquid-solid (VLS) growth; III-V nanowires (NWs); metalorganic vapor phase epitaxy (MOVPE); molecular beam epitaxy (MBE); nucleation kinetics modeling; polytypism; stacking faults (SFs); thermodynamic modeling; twin plane (TP); wurtzite (WZ); zinc blende (ZB)
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Funding
- Swedish Foundation for Strategic Research (SSF)
- Swedish Research Council (VR)
- Knut and Alice Wallenberg Foundation
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III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random structural defects and polytypism occur naturally in semiconductor NWs, but progress both on the theoretical understanding and experimental control have been achieved recently. Here, we review progress towards the realization of perfect wurtzite and zinc-blende phases in III-VNWs, eventually leading to true phase engineering in single NWs.
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