Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 17, Issue 4, Pages 869-877Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2010.2068540
Keywords
Antireflection (AR); holography lithography; silicon nanowire array (SNWA); single-step deep-reactive-ion etching (SDRIE)
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Funding
- National Science Council, Taiwan [NSC97-2221-E-011-077-MY3, NSC97-2917-I-011-103]
- Ministry of Education, Taiwan under the Top University
- University of California at Santa Barbara
- National Science of Foundation for National Nanotechnology Infrastructure Network
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A novel and simple approach is demonstrated for fabricating silicon nanowire arrays (SNWAs) with controllable sidewall profiles. A single-step deep-reactive-ion etching (SDRIE) is used to transfer the holography patterned photoresist template to silicon or silicon-on-insulator substrates. With the SDRIE etching process, scalloping of the sidewalls can be avoided while reserving the high-mask selectivity over resist and high-etching rate. The sidewall angle of resultant patterns can be adjusted by tuning the composition of the gas mixture of the process. A modified-SDRIE process with a linearly changed gas flow is further developed to extend its capability. A post-high-energy argon plasma treatment is used to create sharp tips on the top of SNWAs and to increase the filling factor. Broadband antireflective (AR) window with a low reflectivity can be realized from tall SNWAs with high-filling factor. Depositing silicon dioxide over SNWAs can further enhance the AR performance. The position and bandwidth of the AR window can be controlled by tuning the SNWA parameters.
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