Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 17, Issue 4, Pages 990-995Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2010.2046884
Keywords
Detectivity; nanowire (NW); noise; noise equivalent power (NEP); photodetector; zinc oxide (ZnO)
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Funding
- Center for Frontier Materials and Micro/Nano Science and Technology
- Advanced Optoelectronic Technology Center, National Cheng Kung University under Ministry of Education, Taiwan
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A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide (SiO2) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055 A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-ON and turn-OFF states were tau(ON) = 12.72 ms and tau(OFF) = 447.66 ms, respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the 1/f noise. Besides, the noise equivalent power and normalized detectivity (D*) of the ZnO NW photodetector were 2.32 x 10(-9) Wand 7.43 x 10(9) cm.Hz(0.5).W-1, respectively.
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