Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 16, Issue 1, Pages 165-172Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2009.2027817
Keywords
Diodes; integrated optics; optical communication; optical modulation; silicon-on-insulator (SOI) technology
Categories
Funding
- Defense Advanced Research Projects Agency (DARPA) under Air Force [FA8721-05-C-0002, W911NF-04-1-0431]
- Ida Green
- National Science Foundation (NSF)
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An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device ideal for comparing the two modes of operation. In reverse bias, the device has a V pi L of 4.0 V.cm and a bandwidth of 26 GHz. In forward bias, the device is very sensitive, a V pi L as low as 0.0025 V.cm has been achieved, but the bandwidth is only 100 MHz. A new geometry for a reverse-bias device is proposed, and it is predicted to achieve a V pi L of 0.5 V.cm.
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