Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 15, Issue 4, Pages 1066-1072Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2009.2017208
Keywords
Dislocation density; InGaN quantum wells; light-emitting diodes; MOVPE growth; nanoheteroepitaxy; sapphire
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Funding
- National Science Foundation (NSF) [0701421]
- NSF [0705299]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0705299] Funding Source: National Science Foundation
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Metalorganic vapor phase epitaxial (MOVPE) growth of GaN on nanopatterned AGOG sapphire substrates was performed, and characteristics of the light-emitting diode (LED) devices grown on patterned sapphire and planar substrates were compared. The nanopatterned sapphire substrates were fabricated by a novel process (AGOG) whereby aluminum nanomesas were epitaxially converted into crystalline Al2O3 via a two-stage annealing process. The GaN template grown on the nanopatterned sapphire substrate was done via an abbreviated growth mode, where a 15-nm thick, low-temperature GaN buffer layer was used, without the use of an etch-back and recovery process during the epitaxy. InGaN quantum wells (QWs) LEDs were grown on the GaN template on the nanopatterned sapphire, employing the abbreviated growth mode. The optimized InGaN QW LEDs grown on the patterned AGOG sapphire substrate exhibited a 24% improvement in output power as compared to LEDs on GaN templates grown using the conventional method. The increase in output power of the LEDs is attributed to improved internal quantum efficiency of the LEDs.
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