Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 15, Issue 4, Pages 1080-1091Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2009.2014170
Keywords
Epitaxial growth; LEDs; piezoelectricity; quantum-confined Stark effect (QCSE); quantum wells; semiconductor lasers
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Funding
- U.S. Department of Energy [DE-FC26-03NT41946, DE-FC26-08NT01580]
- SAFC Hitech, Inc.
- National Research Foundation of Korea [과C6B1912] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This paper reviews current technological developments in polarization engineering and the control of the quantum-confined Stark effect (QCSE) for InxGa1-xN-based quantum-well active regions, which are generally employed in visible LEDs for solid-state lighting applications. First, the origin of the QCSE in III-N wurtzite semiconductors is introduced, and polarization-induced internal fields are discussed in order to provide contextual background. Next, the optical and electrical properties of InxGa1-xN-based quantum wells that are affected by the QCSE are described. Finally, several methods for controlling the QCSE of InxGa1-xN-based quantum wells are discussed in the context of performance metrics of visible light emitters, considering both pros and cons. These strategies include doping control, strain/polarization field/electronic band structure control, growth direction control, and crystalline structure control.
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