Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 15, Issue 3, Pages 704-715Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2008.2010955
Keywords
Optical interconnects; optical modulation; oxidation; semiconductor lasers; vertical-cavity surface-emitting lasers (VCSELs)
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Funding
- Defense Advanced Research Projects Agency (DARPA), U.S. Army Research Laboratory (ARL)
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New advances in high-efficiency, high-speed 980-nm vertical-cavity surface-emitting lasers (VCSELs) are presented. The tapered oxide aperture was optimized to provide additional mode confinement without sacrificing its static low-loss performance. The pad capacitance was reduced by using benzocyclobutene, removing the n-contact layer, and shrinking the pad dimension. The mesa capacitance was also lowered by using a thicker oxide aperture and deep oxidation layers. With all these improvements, our devices demonstrated >20 GHz bandwidth, the highest for 980 nm VCSELs, and 35 Gb/s operation at only 10 mW power dissipation, corresponding to the highest reported data rate/power dissipation ratio of 3.5 Gb/(s.mW).
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