Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 49, Issue 9, Pages 753-759Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2013.2272878
Keywords
Array; infrared projection; mid-wave infrared light-emitting diode; type-II superlattice
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Funding
- Test Resource Management Center Test and Evaluation/Science & Technology Program through the U.S. Army Program Executive Office for Simulation, Training and Instrumentation [W91ZLK-06-C-0006]
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Single element 33 x 33 mu m(2) InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 mu m are demonstrated. A peak radiance of 2.2 W/cm(2)/sr was measured corresponding to an apparent temperature greater than 1350 K within the 3-5 mu m band. A 48 mu m pitch, 512 x 512 individually addressable LED array was fabricated from a nominally identical SLED wafer, hybridized with a read-in integrated circuit, and tested. The array exhibited a pixel yield greater than 95%.
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