4.4 Article

A Narrow-Linewidth On-Chip Toroid Raman Laser

Journal

IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 47, Issue 3, Pages 320-326

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2010.2087742

Keywords

Laer noise; optical resonators; phase noise; Raman lasers

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In this paper, we report a narrow-linewidth on-chip toroid Raman laser. Under free-running condition, we have obtained the minimum fundamental linewidth of 3 Hz and the maximum unidirectional output power of 223 mu W. Lasing under the same condition in continuous-wave mode over 90 min is achieved at an average power level of 21 mu W and a standard deviation of 0.17 mu W. We further derived the frequency noise spectrum and identified an enhancement of frequency noise due to Kerr non-linearity. In addition, we have observed the shifting of relaxation oscillation frequency as a consequence of weak mode splitting.

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